High-power Al-free active region InGaAsP/GaAs (Lambda=852 nm) laser diodes for atomic clocks and interferometry applications [5620-43]
Conference, Solid state laser technologies and femtosecond phenomena ; 2004 ; London
2004-01-01
9 pages
Conference paper
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Conference Proceedings | 2006
|High-Power Al-Free Buried InGaAsP/GaAs (lambda =0.8 m) Laser Diodes
British Library Conference Proceedings | 1992
|British Library Conference Proceedings | 2004
|