Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-power Al-free active region InGaAsP/GaAs (Lambda=852 nm) laser diodes for atomic clocks and interferometry applications [5620-43]



    Kongress:

    Conference, Solid state laser technologies and femtosecond phenomena ; 2004 ; London



    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    9 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    High-Power Al-Free Active Region (Lambda = 852nm) DFB Laser Diodes for Atomic Clocks and Interferometry Applications

    Ligeret, V. / European Space Agency / Centre Nationale d'Etudes Spatiales | British Library Conference Proceedings | 2006


    High-Power Al-Free Buried InGaAsP/GaAs (lambda =0.8 m) Laser Diodes

    Garbuzov, D. Z. / Antonishkis, N. Y. / Il'Inskaya, N. D. et al. | British Library Conference Proceedings | 1992


    High-power Al-free active region ridge laser diodes for atomic clocks

    Vermersch, F.-J. / Lecomte, M. / Calligaro, M. et al. | IEEE | 2005


    High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes

    Garbuzov, D.Z. / Antonishkis, N.Y. / Il'inskaya, N.D. et al. | IEEE | 1992


    High-brightness tapered laser diode bars and optical modules with Al-free active region (Lambda=980 nm) [5620-17]

    Krakowski, M. / Calligaro, M. / Larat, C. et al. | British Library Conference Proceedings | 2004