We have developed 852 nm laser structures, using an aluminium free active region. For an AR/HR coated ridge device, we have obtained an optical power of 320 mW in a single spatial mode with the beam quality parameter M/sup 2/=1.5.


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    Titel :

    High-power Al-free active region ridge laser diodes for atomic clocks


    Beteiligte:
    Vermersch, F.-J. (Autor:in) / Lecomte, M. (Autor:in) / Calligaro, M. (Autor:in) / Parilland, O. (Autor:in) / Bansropun, S. (Autor:in) / Krakowski, M. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    253692 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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