Al-free InGaAsP/GaAs SCH SQW (/spl lambda/=0.8 /spl mu/m) single-mode buried laser diodEs having parameters comparable with the best achievements for AlGaAs/GaAs diodes have been fabricated for the first time.


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    Titel :

    High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes


    Beteiligte:
    Garbuzov, D.Z. (Autor:in) / Antonishkis, N.Y. (Autor:in) / Il'inskaya, N.D. (Autor:in) / Zhigulin, S.N. (Autor:in) / Katsavets, N.I. (Autor:in) / Kochergin, A.V. (Autor:in) / Pyataev, V.Z. (Autor:in) / Fuksman, M.V. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    137307 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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