`On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (Lambda = 1.53-1.55 mum) laser diodes
OPTICAL AND QUANTUM ELECTRONICS ; 33 ; 745-750
01.01.2001
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC: | 537.5 |
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