GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O/sub 2/ plasma activation process. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals.
Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals
1999-01-01
158375 byte
Conference paper
Electronic Resource
English
Wafer Surface Treatment for Bonding GaInAsP and Magnetooptic Garnet
British Library Conference Proceedings | 1999
|Direct bonding with on-wafer metal interconnections
British Library Online Contents | 2006
|Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
Online Contents | 2014
|Wafer direct bonding with ambient pressure plasma activation
British Library Online Contents | 2006
|