GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O/sub 2/ plasma activation process. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals.


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    Title :

    Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals


    Contributors:
    Yokoi, H. (author) / Mizumoto, T. (author) / Futakuchi, N. (author) / Kaida, N. (author) / Nakano, Y. (author)


    Publication date :

    1999-01-01


    Size :

    158375 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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