GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O/sub 2/ plasma activation process. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals.


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    Titel :

    Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals


    Beteiligte:
    Yokoi, H. (Autor:in) / Mizumoto, T. (Autor:in) / Futakuchi, N. (Autor:in) / Kaida, N. (Autor:in) / Nakano, Y. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    158375 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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