InGaN/GaN quantum well samples of various silicon doping conditions, including doping layers and concentrations, are compared in nano-structures and emission characteristics for design optimization. The best performance of barrier-doped samples originates from stronger carrier localization.


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    Title :

    Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices


    Contributors:


    Publication date :

    2004-01-01


    Size :

    180606 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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