InGaN/GaN quantum well samples of various silicon doping conditions, including doping layers and concentrations, are compared in nano-structures and emission characteristics for design optimization. The best performance of barrier-doped samples originates from stronger carrier localization.
Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
2004-01-01
180606 byte
Conference paper
Electronic Resource
English
Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping
British Library Conference Proceedings | 2003
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British Library Conference Proceedings | 2003
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