The effects of thermal annealing on the optical properties and material structures of InGaN/GaN quantum wells with silicon doping were studied to find that the material microstructures alternation was the major reason for the changes.


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    Title :

    Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping


    Contributors:


    Publication date :

    2003-01-01


    Size :

    86973 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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