The effects of thermal annealing on the optical properties and material structures of InGaN/GaN quantum wells with silicon doping were studied to find that the material microstructures alternation was the major reason for the changes.
Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping
2003-01-01
86973 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping
British Library Conference Proceedings | 2003
|Phonon-replica transitions in InGaN/GaN quantum well structures
British Library Online Contents | 2002
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