The effects of thermal annealing on the optical properties and material structures of InGaN/GaN quantum wells with silicon doping were studied to find that the material microstructures alternation was the major reason for the changes.


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    Titel :

    Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping


    Beteiligte:
    Yung-Chen Cheng, (Autor:in) / En-Chiang Lin, (Autor:in) / Shih-Wei Feng, (Autor:in) / Hsiang-Chen Wang, (Autor:in) / Yang, C.C. (Autor:in) / Kung-Jen Ma, (Autor:in) / Shih-Chen Shi, (Autor:in) / Chen, L.C. (Autor:in) / Chang-Chi Pan, (Autor:in) / Jen-Inn Chyi, (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    86973 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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