InGaN/GaN quantum well samples of various silicon doping conditions, including doping layers and concentrations, are compared in nano-structures and emission characteristics for design optimization. The best performance of barrier-doped samples originates from stronger carrier localization.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices


    Beteiligte:
    Yung-Chen Cheng, (Autor:in) / En-Chiang Lin, (Autor:in) / Meng-Kuo Chen, (Autor:in) / Cheng-Ming Wu, (Autor:in) / Yang, C.C. (Autor:in) / Kung-Jen Ma, (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    180606 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping

    Cheng, Y.-C. / Lin, E.-C. / Feng, S.-W. et al. | British Library Conference Proceedings | 2003



    Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping

    Yung-Chen Cheng, / En-Chiang Lin, / Shih-Wei Feng, et al. | IEEE | 2003


    400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes

    Chang, S.J. / Kuo, C.H. / Su, Y.K. et al. | IEEE | 2003


    400nm InGaN/GaN and InGaN/AlGaN Multiquantum Well Light-emitting Diodes

    Chang, S. J. / Kuo, C. H. / Su, Y. K. et al. | British Library Conference Proceedings | 2003