400 nm In/sub 0.05/Ga/sub 0.95/N/GaN MQW light emitting diode (LED) structure and In/sub 0.05/Ga/sub 0.95/N/Al/sub 0.1/Ga/sub 0.9/N LED structure were both prepared by organometallic vapor phase epitaxy (OMVPE). It was found that the use of Al/sub 0.1/Ga/sub 0.9/N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20 mA electroluminescence (EL) intensity of InGaN/AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.


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    Title :

    400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes


    Contributors:
    Chang, S.J. (author) / Kuo, C.H. (author) / Su, Y.K. (author) / Wu, L.W. (author) / Sheu, J.K. (author) / Wen, T.C. (author) / Lai, W.C. (author) / Chen, J.F. (author) / Tsai, J.M. (author)


    Publication date :

    2003-01-01


    Size :

    269286 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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