Electroabsorption spectra were measured for GaInNAs and GaInNAsSb quantum wells around 1300 and 1550 nm, respectively, for use in modulators for telecommunication and optical interconnects. Fine structure of band edge transitions were further studied with photoluminescence and electroreflectance.


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    Title :

    Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm


    Contributors:
    Lordi, V. (author) / Yuen, H.B. (author) / Bank, S.R. (author) / Wistey, M.A. (author) / Harris, J.S. (author)


    Publication date :

    2004-01-01


    Size :

    94836 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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