Electroabsorption spectra were measured for GaInNAs and GaInNAsSb quantum wells around 1300 and 1550 nm, respectively, for use in modulators for telecommunication and optical interconnects. Fine structure of band edge transitions were further studied with photoluminescence and electroreflectance.
Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 2 pp. vol.2
2004-01-01
94836 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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