Intersubband absorption, high-resolution X-ray diffraction and photoluminescence were investigated in the n-type Ga/sub 0.7/In/sub 0.3/N/sub 0.01/As/sub 0.99//GaAs/sub 0.998/N/sub 0.002/ quantum wells grown by solid-source molecular beam epitaxy (SSMBE). The bound-to-continuum absorption peaks at around 9.5 /spl mu/m were observed in both as-grown and in-situ annealed samples. The effective mass theory was also carried out to calculate the intersubband absorption in the GalnNAs/GaAsN QWs. The experimental absorption curve is in good agreement with our calculation result.


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    Titel :

    Intersubband absorption in GaInNAs/GaAsN quantum wells


    Beteiligte:
    Fan, W.J. (Autor:in) / Sun, L. (Autor:in) / Yoon, S.F. (Autor:in) / Zhang, D.H. (Autor:in) / Wang, S.Z. (Autor:in) / Mei, T. (Autor:in) / Lee, P.L. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    145996 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    Optical properties of type-II InGaN/GaAsN/GaN quantum wells

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