Summary form only given. Among the most promising materials for 1300 nm emission applications are GaInNAs quantum wells (QWs) and InAs quantum dots (QDs). By directly comparing the radiative properties of identical structures comprising QDs and GaInNAs QWs, we evidence the fundamental differences between the two materials. From temperature-dependent photoluminescence (PL) experiments, we see a much stronger quenching of radiative efficiency for GaInNAs at room temperature (RT), which we attribute to a higher density of nonradiative defects related to N incorporation and low growth temperature. This is confirmed by the carrier lifetime values deduced from the time-resolved PL dynamics.


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    Titel :

    1300 nm on gallium arsenide: quantum dots vs GaInNAs


    Beteiligte:
    Fiore, A. (Autor:in) / Markus, A. (Autor:in) / Chen, J.X. (Autor:in) / Paranthoen, C. (Autor:in) / Ilegems, M. (Autor:in) / Geelhaar, L. (Autor:in) / Riechert, H. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    99324 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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