Summary form only given. Among the most promising materials for 1300 nm emission applications are GaInNAs quantum wells (QWs) and InAs quantum dots (QDs). By directly comparing the radiative properties of identical structures comprising QDs and GaInNAs QWs, we evidence the fundamental differences between the two materials. From temperature-dependent photoluminescence (PL) experiments, we see a much stronger quenching of radiative efficiency for GaInNAs at room temperature (RT), which we attribute to a higher density of nonradiative defects related to N incorporation and low growth temperature. This is confirmed by the carrier lifetime values deduced from the time-resolved PL dynamics.
1300 nm on gallium arsenide: quantum dots vs GaInNAs
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 612-613 vol.2
2002-01-01
99324 byte
Conference paper
Electronic Resource
English
WFF2 1300 nm on Gallium Arsenide: Quantum Dots vs GaInNAs
British Library Conference Proceedings | 2002
|Design issues of 1.55 μm emitting GaInNAs quantum dots
British Library Online Contents | 2008
|Gallium arsenide concentrator system
AIAA | 1977
|Gallium Arsenide Domino Circuit
NTRS | 1990
|