Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers
Annual meeting; 12th, IEEE; Lasers and Electro-Optics Society; LEOS '99 ; 1999 ; San Francisco, CA
1999-01-01
2 pages
IEEE cat no 99CH37009
Aufsatz (Konferenz)
Englisch
LEOS , lasers , IEEE , electro-optics
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