We describe a new InGaP/lnGaAs/GaAs quantum well laser structure, the SPIN (Spread INdex) laser design. The figure of merit for the 980 nm Er-doped fiber application is how much power is coupled into the single-mode fiber. This is determined by the beam divergence and external differential quantum efficiency. To this end, the SPIN laser design allows a nearly symmetrical beam divergence, while maintaining high external differential quantum efficiency. The laser structure was grown by low pressure (45 Torr) metalorganic chemical vapor deposition (MOCVD).
Strain compensated InGaAs/GaAsP/InGaP 980 nm lasers with 90% fiber coupling efficiency
01.01.1996
140329 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Strain Compensated InGaAs/GaAsP/InGaP 980 nm Lasers with 90% Fiber Coupling Efficiency
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