We describe a new InGaP/lnGaAs/GaAs quantum well laser structure, the SPIN (Spread INdex) laser design. The figure of merit for the 980 nm Er-doped fiber application is how much power is coupled into the single-mode fiber. This is determined by the beam divergence and external differential quantum efficiency. To this end, the SPIN laser design allows a nearly symmetrical beam divergence, while maintaining high external differential quantum efficiency. The laser structure was grown by low pressure (45 Torr) metalorganic chemical vapor deposition (MOCVD).


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    Titel :

    Strain compensated InGaAs/GaAsP/InGaP 980 nm lasers with 90% fiber coupling efficiency


    Beteiligte:
    Lopata, J. (Autor:in) / Vakhshoori, D. (Autor:in) / Hobson, W.S. (Autor:in) / Han, H. (Autor:in) / Henein, G.E. (Autor:in) / Wynn, J.D. (Autor:in) / deJong, J. (Autor:in) / Schnoes, M.L. (Autor:in) / Zydzik, G.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    140329 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Strain Compensated InGaAs/GaAsP/InGaP 980 nm Lasers with 90% Fiber Coupling Efficiency

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Strain-compensated InGaAs/GaAsP/InGaP laser (Invited Paper) [3004-05]

    Dutta, N. K. / Hobson, W. S. / Vakhshoori, D. et al. | British Library Conference Proceedings | 1997