We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.
Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content
01.01.2003
69377 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content
British Library Conference Proceedings | 2003
|British Library Conference Proceedings | 1999
|British Library Conference Proceedings | 2001
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