Summary form only given. MOCVD is used for the growth of high performance, highly-strained InGaAs(N)-GaAs quantum-well (QW) lasers. Diode lasers, with a highly-strained In/sub 0.35/Ga/sub 0.65/As QW and GaAs/sub 0.85/P/sub 0.15/ tensile-strained barriers, are demonstrated with very low threshold current density (J/sub th/ = 65 A/cm/sup 2/, L = 1500 /spl mu/m) and transparency current density (J/sub tr/ = 30 A/cm/sup 2/), at a wavelength of 1.17 /spl mu/m. External differential quantum efficiency (/spl eta//sub d/) as high as 56% has also been achieved for the short cavity (L = 500 /spl mu/m) devices.


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    Titel :

    Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (/spl lambda/>1.17 /spl mu/m) quantum well lasers


    Beteiligte:
    Tansu, N. (Autor:in) / Ying-Lan Chang, (Autor:in) / Takeuchi, T. (Autor:in) / Bour, D.P. (Autor:in) / Corzine, S.W. (Autor:in) / Tan, M.R.T. (Autor:in) / Mawst, L.J. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    170600 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch