We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.


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    Title :

    Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content


    Contributors:
    Kawaguchi, M. (author) / Miyamoto, T. (author) / Kawakami, S. (author) / Minobe, S. (author) / Saitoh, A. (author) / Koyama, F. (author)


    Publication date :

    2003-01-01


    Size :

    69377 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English