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    Title :

    Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers


    Contributors:

    Conference:

    Annual meeting; 12th, IEEE; Lasers and Electro-Optics Society; LEOS '99 ; 1999 ; San Francisco, CA



    Publication date :

    1999-01-01


    Size :

    2 pages


    Remarks:

    IEEE cat no 99CH37009




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English






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