We overview how the novel electronic structure of dilute nitride alloys modifies the gain characteristics of GaInNAs lasers. Optimised devices should have comparable or better characteristics than InP-based emitters, enabling GaAs-based 1.3 /spl mu/m vertical emitting lasers.


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    Title :

    Novel electronic and optoelectronic properties of GaInNAs and related alloys


    Contributors:
    O'Reilly, E.P. (author) / Fahy, S. (author) / Lindsay, A. (author) / Tomic, S. (author) / Fehse, R. (author) / Adams, A.R. (author) / Sweeney, S.J. (author) / Andreev, A.D. (author) / Klar, P.J. (author) / Gruning, H. (author)


    Publication date :

    2003-01-01


    Size :

    222541 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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