In this paper, we fully review our recent progress in GaInNAs/GaAs long-wavelength lasers. An excellent characteristic temperature was confirmed for the GaInNAs laser diodes with a 1.2-micrometer wavelength. A record high value (T0 equals 126 K) was obtained in the temperature range from 25 to 85 degrees Celsius. We have also succeeded in applying GaInNAs to long-wavelength laser didoes that lased under room-temperature continuous-wave operation in the 1.3- micrometer wavelength range suitable for optical fiber communications. The temperature dependence of the lasing wavelength was as low as 0.35 nm/degrees Celsius. Thus, we have experimentally demonstrated that the GaInNAs laser diodes are very promising for application in optical fiber communications to overcome the poor temperature behavior of the conventional InGaAsP-based long-wavelength lasers.


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    Title :

    GaInNAs/GaAs long-wavelength lasers


    Contributors:

    Conference:

    In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II ; 1998 ; San Jose,CA,USA


    Published in:

    Publication date :

    1998-04-07





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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