This manuscript presents our recent findings from small signal RF measurements of AlGaN/GaN high-electron-mobility transistors (HEMTs) at different temperatures. We will discuss the temperature-dependent variations of key RF device performance parameters, including extrinsic cutoff frequency $(f_{T})$, maximum gain frequency $(f_{max}$), unilateral power gain (UPG), and maximum stable gain (MSG).
RF Performance Evaluation of AlGaN/GaN 140 nm T-gate HEMTs at High Temperatures
2024-07-15
935009 byte
Conference paper
Electronic Resource
English
High Frequency Optical Mixing in 50-nm Gate HEMTs to 211 GHz
British Library Conference Proceedings | 1997
|Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study
Springer Verlag | 2024
|Normally-Off AlGaN/GaN HFET with P-Type GaN Gate and AlGaN Buffer
British Library Conference Proceedings | 2010
|