This manuscript presents our recent findings from small signal RF measurements of AlGaN/GaN high-electron-mobility transistors (HEMTs) at different temperatures. We will discuss the temperature-dependent variations of key RF device performance parameters, including extrinsic cutoff frequency $(f_{T})$, maximum gain frequency $(f_{max}$), unilateral power gain (UPG), and maximum stable gain (MSG).


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    Title :

    RF Performance Evaluation of AlGaN/GaN 140 nm T-gate HEMTs at High Temperatures




    Publication date :

    2024-07-15


    Size :

    935009 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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