Recently, the features of AlGaN/GaN high electron mobility transistors (HEMTs) known as breakdown voltage (BV) have garnered a lot of interest for RF and Power applications. But due to the electric field and current collapse, the breakdown voltage of the GaN HEMTs device is reduced. Therefore, in this research, the field plate technique has been studied for enhancing the GaN HEMTs device breakdown voltage by using Silvaco TCAD software. It's observed that the dual field plate has shown a higher breakdown voltage around 1100 V, whereas the gate field plate and source field plate have illustrated a breakdown voltage of 820 and 1000 V approximately. Subsequently, GaN HEMTs presented a threshold voltage (VTH) of − 3.3 V and transconductance (GM) of 16.3 mS/mm approximately.


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    Title :

    Enhance the AlGaN/GaN HEMTs Device Breakdown Voltage by Implementing Field Plate: Simulation Study


    Additional title:

    Lect. Notes Electrical Eng.



    Conference:

    International Conference on Robotics, Vision, Signal Processing and Power Applications ; 2021 April 05, 2021 - April 06, 2021



    Publication date :

    2024-03-31


    Size :

    7 pages





    Type of media :

    Article/Chapter (Book)


    Type of material :

    Electronic Resource


    Language :

    English




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