This manuscript presents our recent findings from small signal RF measurements of AlGaN/GaN high-electron-mobility transistors (HEMTs) at different temperatures. We will discuss the temperature-dependent variations of key RF device performance parameters, including extrinsic cutoff frequency $(f_{T})$, maximum gain frequency $(f_{max}$), unilateral power gain (UPG), and maximum stable gain (MSG).
RF Performance Evaluation of AlGaN/GaN 140 nm T-gate HEMTs at High Temperatures
15.07.2024
935009 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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