The impact of gate and drain leakage on VTH drift and dynamic-RON of 100 V p-GaN gate AlGaN/GaN HEMTs is investigated in this work. Devices presenting two different AlGaN barrier layer designs are characterized by means of DC gate/drain leakage and Pulsed I-V measurements. Results show that a larger gate leakage yields a reduced positive VTH drift under off-state stress at large VDS, coherently with hole injection in the floating p-GaN gate. Conversely, a larger off-state drain leakage current exacerbates the RON degradation at high VDS,stress due to hot-electrons effects. The application of a negative VGS,stress has been demonstrated to solve this issue, thanks to a more pinched-off channel that avoids hot-electrons related issues.
Impact of Gate and Drain Leakage on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs
2023-07-17
680384 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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