The impact of gate and drain leakage on VTH drift and dynamic-RON of 100 V p-GaN gate AlGaN/GaN HEMTs is investigated in this work. Devices presenting two different AlGaN barrier layer designs are characterized by means of DC gate/drain leakage and Pulsed I-V measurements. Results show that a larger gate leakage yields a reduced positive VTH drift under off-state stress at large VDS, coherently with hole injection in the floating p-GaN gate. Conversely, a larger off-state drain leakage current exacerbates the RON degradation at high VDS,stress due to hot-electrons effects. The application of a negative VGS,stress has been demonstrated to solve this issue, thanks to a more pinched-off channel that avoids hot-electrons related issues.


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    Title :

    Impact of Gate and Drain Leakage on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs


    Contributors:
    Cioni, M. (author) / Giorgino, G. (author) / Chini, A. (author) / Parisi, A. (author) / Cappellini, G. (author) / Modica, L. (author) / Luongo, G. (author) / Miccoli, C. (author) / Castagna, M. E. (author) / Moschetti, M. (author)


    Publication date :

    2023-07-17


    Size :

    680384 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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