Surface-illuminated vertical p-i-n Ge/SiGe multiple quantum wells photodiodes are demonstrated with a low dark current density of 200 mA/cm2 and 10 GHz optical bandwidth at -1 V which reaches over 30 GHz at -7 V.


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    Title :

    30 GHz Ge/SiGe multiple quantum well photodiode


    Contributors:
    Chaisaku, P. (author) / Marris-Morini, D. (author) / Isella, G. (author) / Chrastina, D. (author) / Le Roux, X. (author) / Edmond, S. (author) / Cassan, E. (author) / Coudevylle, J.-R (author) / Vivien, L. (author)


    Publication date :

    2011-09-01


    Size :

    356290 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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