Many fibre-optic telecommunications systems exploit the spectral `window' at 1310 nm, which corresponds to zero dispersion in standard single-mode fibres (SMFs). In particular, several passive optical network (PON) architectures use 1310 nm for upstream signals,1 and so compact, low-cost and low-power modulators operating at 1310 nm that can be integrated into Si electronic-photonic integrated circuits would be extremely desireable for future fibre-to-the-home (FTTH) applications.
Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures
2011-09-01
110244 byte
Conference paper
Electronic Resource
English
British Library Online Contents | 2010
|Optimization of Multiple Quantum Well Electroabsorption Modulators
British Library Online Contents | 1993
|Analog Performance of Multiple-quantum-well Electroabsorption Modulator
British Library Online Contents | 2005
|