Many fibre-optic telecommunications systems exploit the spectral `window' at 1310 nm, which corresponds to zero dispersion in standard single-mode fibres (SMFs). In particular, several passive optical network (PON) architectures use 1310 nm for upstream signals,1 and so compact, low-cost and low-power modulators operating at 1310 nm that can be integrated into Si electronic-photonic integrated circuits would be extremely desireable for future fibre-to-the-home (FTTH) applications.


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    Title :

    Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures


    Contributors:
    Lever, L. (author) / Hu, Y. (author) / Myronov, M. (author) / Liu, X. (author) / Owens, N. (author) / Gardes, F. Y. (author) / Marko, I. P. (author) / Sweeney, S. J. (author) / Ikonic, Z. (author) / Leadley, D. R. (author)


    Publication date :

    2011-09-01


    Size :

    110244 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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    Si, W. / Li, D. / Zhang, K. | British Library Online Contents | 1993


    Analog Performance of Multiple-quantum-well Electroabsorption Modulator

    Yun, Y. S. / Choi, Y. W. / Chung, J. D. et al. | British Library Online Contents | 2005


    Electroabsorption in ultranarrow-barrier GaAs/AlAs multiple quantum well modulators

    Goossen, K.W. / Cunningham, J.E. / Jan, W.Y. | IEEE | 1993


    Dynamic range of traveling-wave multiple-quantum-well electroabsorption modulators

    Bin Liu, / Jongin Shim, / Yi-jen Chiu, et al. | IEEE | 2003