This paper describes the design principle of modulation doped AlGaAs/GaAs field effect transistors (HEMT). Processing steps of gate length as short as 0. 2 /spl mu/m with T-shape gate and the condition of the E-Beam lithography to obtain submicron gate length. Transcanductances of the order of 200ms/mm at room temperature and 375ms/mm at 77K are measured.


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    Title :

    Sub-quarter micron gate length high electron mobility transistors processing technology


    Contributors:
    Ynag, Y. (author)


    Publication date :

    1989-01-01


    Size :

    226798 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English