We have successfully observed THz radiation due to ultrafast modulation of drain-source current induced by ultrafast optical gate-field modulation in high-electron mobility transistors. This phenomenon was applied to the characterization of cutoff frequencies of ultrahigh-speed transistors. The measured cutoff frequency was in reasonable agreement with that determined by a network analyzer.


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    Title :

    Terahertz radiation from high electron mobility transistors induced by ultrafast optical gate switching


    Contributors:
    Kondo, T. (author) / Hirakawa, K. (author)


    Publication date :

    2005-01-01


    Size :

    1752084 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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