We have successfully observed THz radiation due to ultrafast modulation of drain-source current induced by ultrafast optical gate-field modulation in high-electron mobility transistors. This phenomenon was applied to the characterization of cutoff frequencies of ultrahigh-speed transistors. The measured cutoff frequency was in reasonable agreement with that determined by a network analyzer.
Terahertz radiation from high electron mobility transistors induced by ultrafast optical gate switching
2005-01-01
1752084 byte
Conference paper
Electronic Resource
English
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