We have successfully observed THz radiation due to ultrafast modulation of drain-source current induced by ultrafast optical gate-field modulation in high-electron mobility transistors. This phenomenon was applied to the characterization of cutoff frequencies of ultrahigh-speed transistors. The measured cutoff frequency was in reasonable agreement with that determined by a network analyzer.
Terahertz radiation from high electron mobility transistors induced by ultrafast optical gate switching
2005-01-01
1752084 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2005
|Millimeter-wave generation by optical mixing in ultrafast high electron mobility transistors
British Library Conference Proceedings | 1999
|British Library Online Contents | 1996
|A 212 GHz Millimeter Wave Source Using Optical Mixing in High Electron Mobility Transistors
British Library Conference Proceedings | 1998
|