We have successfully observed THz radiation due to ultrafast modulation of drain-source current induced by ultrafast optical gate-field modulation in high-electron mobility transistors. This phenomenon was applied to the characterization of cutoff frequencies of ultrahigh-speed transistors. The measured cutoff frequency was in reasonable agreement with that determined by a network analyzer.


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    Titel :

    Terahertz radiation from high electron mobility transistors induced by ultrafast optical gate switching


    Beteiligte:
    Kondo, T. (Autor:in) / Hirakawa, K. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    1752084 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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