This paper describes the design principle of modulation doped AlGaAs/GaAs field effect transistors (HEMT). Processing steps of gate length as short as 0. 2 /spl mu/m with T-shape gate and the condition of the E-Beam lithography to obtain submicron gate length. Transcanductances of the order of 200ms/mm at room temperature and 375ms/mm at 77K are measured.
Sub-quarter micron gate length high electron mobility transistors processing technology
01.01.1989
226798 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2005
|British Library Online Contents | 2017
|Millimeter-wave generation by optical mixing in ultrafast high electron mobility transistors
British Library Conference Proceedings | 1999
|