A High Electron Mobility Transistor of GaN Metal Oxide Semiconductor with 0.5 μm Gate Length Employing HfO~2 as Gate Dielectric
Xian Jiaotong Daxue xuebao ; 51 , 8 ; 72-76
2017-01-01
5 pages
Article (Journal)
Unknown
DDC: | 500 |
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