A high breakdown-voltage and high-linearity field effect transistor based on n-p-n structure, i.e., camel-gate field-effect transistor (CAMFET), has successfully fabricated and demonstrated. The CAMFET employs very thin n+ and p+ layers together with the channel to form a majority-carrier camel diode for modulating the channel current. The breakdown voltage about 21 V is obtained Furthermore, the maximum drain saturation current and transconductance are as high as 770 mA/mm and 220 mS/mm, respectively. Consequently, for the tri-step doping channel CAMFET, not only have the voltage-independent but also the high transconductance are obtained.


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    Titel :

    High Breakdown-Voltage and High-Linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:
    Tsai, Jung-Hui (Autor:in)

    Kongress:

    34th Intersociety Energy Conversion Engineering Conference ; 1999



    Erscheinungsdatum :

    02.08.1999




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch


    Schlagwörter :



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