A Threshold Voltage Model for Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistor
JOURNAL- XIAN JIAOTONG UNIVERSITY ; 44 , 2 ; 77-81
01.01.2010
5 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC: | 500 |
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A Current Model for Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistor
British Library Online Contents | 2010
|British Library Online Contents | 2011
|British Library Online Contents | 2013
|Porous-Floating-Gate Field-Effect Transistor
NTRS | 1990
|