A high breakdown-voltage and high-linearity field effect transistor based on n-p-n structure, i.e., camel-gate field-effect transistor (CAMFET), has successfully fabricated and demonstrated. The CAMFET employs very thin n+ and p+ layers together with the channel to form a majority-carrier camel diode for modulating the channel current. The breakdown voltage about 21 V is obtained Furthermore, the maximum drain saturation current and transconductance are as high as 770 mA/mm and 220 mS/mm, respectively. Consequently, for the tri-step doping channel CAMFET, not only have the voltage-independent but also the high transconductance are obtained.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High Breakdown-Voltage and High-Linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels


    Additional title:

    Sae Technical Papers


    Contributors:

    Conference:

    34th Intersociety Energy Conversion Engineering Conference ; 1999



    Publication date :

    1999-08-02




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English


    Keywords :



    Porous-Floating-Gate Field-Effect Transistor

    Thakoor, Anilkumar P. / Moopenn, Alexander W. / Lambe, John J. | NTRS | 1990


    A Threshold Voltage Model for Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistor

    You, Y. / Li, Z. / Liu, L. | British Library Online Contents | 2010


    Threshold Voltage Modeling of Partially-Depleted Dual-Material Surrounding Gate Field-Effect Transistor

    Li, Z. / Luo, C. / Wang, C. et al. | British Library Online Contents | 2013