The layer structure consists of a 300 nm-thick InAlAs buffer layer, a 27 nm-thick composition graded InAlAs-InGaAs short period superlattice (SPSL) layer, a 1.0 /spl mu/m-thick InGaAs photoabsorption layer, a 27 nm-thick InAlAs-lnGaAs SPSL, and a 30 nm-thick InAlAs Schottky barrier enhancement layer. We report in this talk a dark current of 38 nA a capacitance of 0.8 pF, and a 3-dB bandwidth of 2.4 GHz obtained from 300x300 /spl mu/m device with 4 /spl mu/m finger spacing using lattice matched InAlAs Schottky barrier enhancement layer.


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    Titel :

    Large-area InAlAs/InGaAs Schottky barrier enhanced metal semiconductor metal photodiode with low dark current


    Beteiligte:
    Kim, J.-B. (Autor:in) / Kim, M.-J. (Autor:in) / Park, J.-W. (Autor:in) / Kim, D.-H. (Autor:in) / Kim, S.-J. (Autor:in) / Hwang, W.-Y. (Autor:in) / Miller, D.L. (Autor:in) / Das, M.B. (Autor:in) / Rios, J.M.M. (Autor:in) / Lunardi, L.M. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    180264 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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