Mesa type fused InGaAs/Si separated absorption and multiplication APDs with a diameter of 130 /spl mu/m have been fabricated on n-type Si substrate. Substantial dark current reduction has been achieved compared with the published data for fused InGaAs/Si APDs. Dark current densities as low as 0.23 mA/cm/sup 2/ at -5 V and 3 mA/cm/sup 2/ at a gain of 10 are reported. Our improved dark current even though is still 2 orders larger than the conventional mesa-structure InGaAs/InP APD lower excess noise level is expected due to the larger difference between the electron and hole ionization coefficients of Si.


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    Titel :

    Dark current reduction in fused InGaAs/Si avalanche photodiode


    Beteiligte:
    Kang, Y. (Autor:in) / Mages, P. (Autor:in) / Pauchard, A. (Autor:in) / Clawson, A.R. (Autor:in) / Lau, S.S. (Autor:in) / Lo, Y.H. (Autor:in) / Yu, P.K.L. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    161765 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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