The layer structure consists of a 300 nm-thick InAlAs buffer layer, a 27 nm-thick composition graded InAlAs-InGaAs short period superlattice (SPSL) layer, a 1.0 /spl mu/m-thick InGaAs photoabsorption layer, a 27 nm-thick InAlAs-lnGaAs SPSL, and a 30 nm-thick InAlAs Schottky barrier enhancement layer. We report in this talk a dark current of 38 nA a capacitance of 0.8 pF, and a 3-dB bandwidth of 2.4 GHz obtained from 300x300 /spl mu/m device with 4 /spl mu/m finger spacing using lattice matched InAlAs Schottky barrier enhancement layer.
Large-area InAlAs/InGaAs Schottky barrier enhanced metal semiconductor metal photodiode with low dark current
1996-01-01
180264 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1996
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