The layer structure consists of a 300 nm-thick InAlAs buffer layer, a 27 nm-thick composition graded InAlAs-InGaAs short period superlattice (SPSL) layer, a 1.0 /spl mu/m-thick InGaAs photoabsorption layer, a 27 nm-thick InAlAs-lnGaAs SPSL, and a 30 nm-thick InAlAs Schottky barrier enhancement layer. We report in this talk a dark current of 38 nA a capacitance of 0.8 pF, and a 3-dB bandwidth of 2.4 GHz obtained from 300x300 /spl mu/m device with 4 /spl mu/m finger spacing using lattice matched InAlAs Schottky barrier enhancement layer.


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    Title :

    Large-area InAlAs/InGaAs Schottky barrier enhanced metal semiconductor metal photodiode with low dark current


    Contributors:
    Kim, J.-B. (author) / Kim, M.-J. (author) / Park, J.-W. (author) / Kim, D.-H. (author) / Kim, S.-J. (author) / Hwang, W.-Y. (author) / Miller, D.L. (author) / Das, M.B. (author) / Rios, J.M.M. (author) / Lunardi, L.M. (author)


    Publication date :

    1996-01-01


    Size :

    180264 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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