A significant enhancement of the impulse response and capacitance performance of thin film I-MSMs has been demonstrated through etching, while still preserving the thickness of the absorbing region. Thus, the traditional tradeoff between device output current, as defined by device diameter and absorbing layer thickness and capacitance/speed, has been alleviated through etching enhancement.


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    Title :

    Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors


    Contributors:
    Sang-Woo Seo, (author) / Cheolung Cha, (author) / Sang-Yeon Cho, (author) / Sa Huang, (author) / Jokerst, N.M. (author) / Brooke, M.A. (author) / Brown, A.S. (author)


    Publication date :

    2004-01-01


    Size :

    86165 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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