A significant enhancement of the impulse response and capacitance performance of thin film I-MSMs has been demonstrated through etching, while still preserving the thickness of the absorbing region. Thus, the traditional tradeoff between device output current, as defined by device diameter and absorbing layer thickness and capacitance/speed, has been alleviated through etching enhancement.
Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors
01.01.2004
86165 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2004
|British Library Conference Proceedings | 1996
|British Library Online Contents | 1996
|Metal-Semiconductor-Metal Photodetectors
British Library Conference Proceedings | 2004
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