A significant enhancement of the impulse response and capacitance performance of thin film I-MSMs has been demonstrated through etching, while still preserving the thickness of the absorbing region. Thus, the traditional tradeoff between device output current, as defined by device diameter and absorbing layer thickness and capacitance/speed, has been alleviated through etching enhancement.


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    Titel :

    Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors


    Beteiligte:
    Sang-Woo Seo, (Autor:in) / Cheolung Cha, (Autor:in) / Sang-Yeon Cho, (Autor:in) / Sa Huang, (Autor:in) / Jokerst, N.M. (Autor:in) / Brooke, M.A. (Autor:in) / Brown, A.S. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    86165 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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