Summary form only given. InGaAs metal-semiconductor-metal (MSM) photodetectors are one of the promising devices for 1.55 /spl mu/m lightwave communication systems because of their high-speed performance derived from the low capacitance per unit area. The low dark current and the large signal-to-noise ratio (SNR) are essential for high performance devices. For high-speed application, it is desired to embed MSM photodetector in coplanar wave-guide (CPW) transmission lines. However, one needs to overcome the relative large dark currents resulting from the proximity of the signal line and ground lines. In the study, we describe the effects of etching the epilayers between the signal line and ground lines of a CPW and increasing Schottky barrier enhancement layer thickness on the dark current and gain asymmetry.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Dark current reduction in InGaAs metal-semiconductor-metal photodetectors with coplanar waveguide transmission lines


    Beteiligte:
    Junghwan Kim, (Autor:in) / Lee, K.J. (Autor:in) / Johnson, F.G. (Autor:in) / Johnson, W.B. (Autor:in) / Lee, C.H. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    121603 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    1.55 mum Surface Excited Monolithically Integrated Balanced Metal-Semiconductor-Metal Photodetectors and Coplanar Waveguide

    Safwat, A. M. E. / Kim, J. / Johnson, W. et al. | British Library Conference Proceedings | 2001


    Low dark current metal-semiconductor-metal photodetectors fabricated on GaN

    Carrano, J.C. / Grudowski, P.A. / Eiting, C.J. et al. | IEEE | 1997



    High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

    Yuang, R.-H. / Chyi, J.-I. / Lin, W. et al. | British Library Online Contents | 1996


    Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors

    Sang-Woo Seo, / Cheolung Cha, / Sang-Yeon Cho, et al. | IEEE | 2004