Optical pumping of excited donor states in silicon crystals doped by antimony, phosphor, arsenic, and bismuth impurity centers by emission from a free electron laser yields stimulated terahertz emission (4-7 THz). The detailed study of silicon emission spectra provides information on intracenter phonon-assisted relaxation mechanisms in silicon at low lattice temperatures as well as on binding energies of excited states of donor centers.


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    Titel :

    Generation of THz emission from donor centers in silicon under intracenter optical pumping


    Beteiligte:
    Pavlov, S.G. (Autor:in) / Hovenier, J.N. (Autor:in) / Klaassen, T.O. (Autor:in) / Carder, D. (Autor:in) / Hubers, H.-W. (Autor:in) / Zhukavin, R.Kh. (Autor:in) / Riemann, H. (Autor:in) / Redlich, B. (Autor:in) / Shastin, V.N. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    170922 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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