Optical pumping of excited donor states in silicon crystals doped by antimony, phosphor, arsenic, and bismuth impurity centers by emission from a free electron laser yields stimulated terahertz emission (4-7 THz). The detailed study of silicon emission spectra provides information on intracenter phonon-assisted relaxation mechanisms in silicon at low lattice temperatures as well as on binding energies of excited states of donor centers.


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    Title :

    Generation of THz emission from donor centers in silicon under intracenter optical pumping


    Contributors:
    Pavlov, S.G. (author) / Hovenier, J.N. (author) / Klaassen, T.O. (author) / Carder, D. (author) / Hubers, H.-W. (author) / Zhukavin, R.Kh. (author) / Riemann, H. (author) / Redlich, B. (author) / Shastin, V.N. (author)


    Publication date :

    2004-01-01


    Size :

    170922 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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