The authors show that the induced far-infrared emission in uniaxially compressed p-Ge is due to the population inversion of strain-split acceptor levels as one of them is in the valence band. The possibility of a strong frequency tuning by stress is also shown.


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    Title :

    Induced intracenter optical transitions in compressed p-Ge


    Contributors:


    Publication date :

    1996-01-01


    Size :

    196583 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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