The authors show that the induced far-infrared emission in uniaxially compressed p-Ge is due to the population inversion of strain-split acceptor levels as one of them is in the valence band. The possibility of a strong frequency tuning by stress is also shown.
Induced intracenter optical transitions in compressed p-Ge
01.01.1996
196583 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Induced Intracenter Optical Transitions in Compressed p-Ge
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