The authors show that the induced far-infrared emission in uniaxially compressed p-Ge is due to the population inversion of strain-split acceptor levels as one of them is in the valence band. The possibility of a strong frequency tuning by stress is also shown.


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    Titel :

    Induced intracenter optical transitions in compressed p-Ge


    Beteiligte:
    Altukhov, I.V. (Autor:in) / Chirkova, E.G. (Autor:in) / Kagan, M.S. (Autor:in) / Korolev, K.A. (Autor:in) / Sinis, V.P. (Autor:in) / Yassievich, I.N. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    196583 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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